Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

被引：87

作者：

Mohseni, H ^{[1
]}

Michel, E ^{[1
]}

Sandoen, J ^{[1
]}

Razeghi, M ^{[1
]}

Mitchel, W ^{[1
]}

Brown, G ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.119906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 mu m and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33 x 10(9) cm Hz(1/2)/W at 10.3 mu m at 78 K. (C) 1997 American Institute of Physics.

引用

页码：1403 / 1405

页数：3

共 15 条

[1] AUGER LIFETIMES IN IDEAL INGASB/INAS SUPERLATTICES [J].

GREIN, CH ;

YOUNG, PM ;

EHRENREICH, H ;

MCGILL, TC .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) :1093-1096

[2] Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection [J].

Jelen, C ;

Slivken, S ;

Hoff, J ;

Razeghi, M ;

Brown, GJ .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :360-362

[3] Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb [J].

Johnson, JL ;

Samoska, LA ;

Gossard, AC ;

Merz, JL ;

Jack, MD ;

Chapman, GR ;

Baumgratz, BA ;

Kosai, K ;

Johnson, SM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1116-1127

[4] PERFORMANCE LIMITATIONS OF GAAS ALGAAS INFRARED SUPERLATTICES [J].

KINCH, MA ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1989, 55 (20) :2093-2095

[5]

KUTCHIS EV, 1990, GALVANOMAGNETIC EFFE

[6] LONG-WAVELENGTH INFRARED DETECTORS BASED ON STRAINED INAS-GA1-XINXSB TYPE-II SUPERLATTICES [J].

MAILHIOT, C ;

SMITH, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :445-449

[7]

MARZIN JY, 1985, HETEROJUNCTIONS SEMI, P161

[8]

REINE MB, 1981, SEMICONDUCT SEMIMET, V18, P201

[9]

ROGALSKI A, 1994, OPT ENG, V33, P1392, DOI 10.1117/12.181748

[10]

ROGALSKI A, 1995, INFRARED PHOTON DETE, P15

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