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Porous silicon grains in SiO2 matrix:: Ultrafast photoluminescence and optical gain

被引：9
作者：
Luterova, K.
Dohnalova, K.
Trojanek, F.
Neudert, K.
Gilliot, P.
Honerlage, B.
Maly, P.
Pelant, I.
机构：
[1] Acad Sci Czech Republ, Inst Phys, Dept Thin FIlms, CZ-16253 Prague 6, Czech Republic
[2] Charles Univ Prague, Fac Math & Phys, Dept Chem Phys & Opt, CR-12116 Prague 2, Czech Republic
[3] ULP, CNRS, UMR 7504, IPCMS,Grp Opt Non Lineaire & Optoelect, F-67034 Strasbourg 2, France
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 28-29期
关键词：
nanocrystals; optical properties; lasers; luminescence; non-linear optics; ultrafast processes and measurements; upconversion; time resolved measurements;
D O I：
10.1016/j.jnoncrysol.2006.04.021
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We search for the presence of stimulated emission in samples of porous silicon embedded in the sot-gel derived SiO2 matrix. By modifying the etching conditions of the porous silicon using hydrogen peroxide, we decrease substantially the nanocrystal size and produce a significant blue shift of the PL emission. Femtosecond variable-stripe length experiments combined with the shifting-excited spot technique demonstrates positive optical gain (modal gain similar to 25 cm(-1)) in the range 550-730 nm. Ultrafast photoluminescence dynamics indicates the origin of the stimulated emission as possibly due to recombination of excitonic states inside silicon nanocrystals. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：3041 / 3046
页数：6
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