PbCaTe films and PbCaTe/PbTe superlattices prepared by hot-wall epitaxy

被引：4

作者：

Ishida, A ^{[1
]}

Tsuchiya, T ^{[1
]}

Yoshioka, N ^{[1
]}

Ishino, K ^{[1
]}

Fujiyasu, H ^{[1
]}

机构：

[1] Shizuoka Univ, Fac Engn, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 08期

关键词：

IV-VI semiconductor; PbCaTe; hot-wall epitaxy; narrow gap; mid-infrared; superlattice; optical absorption; X-ray diffraction;

D O I：

10.1143/JJAP.38.4652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PbCaTe films, and PbCaTe/PbTe and CaTe/PbTe superlattices were prepared by hot-wall epitaxy for application to mid- and far-infrared lasers of the 4 to 20 mu m range. The PbCaTe ternary alloy shows good lattice matching with PbTe, and high carrier concentration films with a band gap wider than 650 meV were obtained by doping Bi and Tl as donor and acceptor impurities, respectively. PbCaTe/PbTe and CaTe/PbTe superlattices with very thin CaTe layers were also prepared. Optical transmission measurements were performed for the superlattices. Steplike interband absorption due to two the dimensional density of states of the superlattices was observed at room temperature. The absorption edge of the PbCaTe/PbTe superlattices agreed well with the theoretical values calculated by the envelope-function approximation.

引用

页码：4652 / 4655

页数：4

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