Directed nucleation of ordered nanoparticle arrays on amorphous surfaces

被引：9

作者：

Coffee, Shawn S. ^{[1
]}

Stanley, Scott K. ^{[1
]}

Ekerdt, John G. ^{[1
]}

机构：

[1] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1116/1.2221318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with similar to 20-24nm pores and a 6 x 10(10) cm(-2) pore density. Poly (styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition at 800 K produced Ge nanoparticles using 6-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth, nanoparticle density is approximately one particle per pore. (c) 2006 American Vacuum Society.

引用

收藏

页码：1913 / 1917

页数：5

相关论文

共 40 条

[1] Chemical vapor deposition of Ge nanocrystals on SiO2 [J].

Baron, T ;

Pelissier, B ;

Perniola, L ;

Mazen, F ;

Hartmann, JM ;

Rolland, G .

APPLIED PHYSICS LETTERS, 2003, 83 (07) :1444-1446

[2] Growth of Si nanocrystals on alumina and integration in memory devices [J].

Baron, T ;

Fernandes, A ;

Damlencourt, JF ;

De Salvo, B ;

Martin, F ;

Mazen, F ;

Haukka, S .

APPLIED PHYSICS LETTERS, 2003, 82 (23) :4151-4153

[3] Nucleation control of CVD growth silicon nanocrystals for quantum devices [J].

Baron, T ;

Mazen, F ;

Busseret, C ;

Souifi, A ;

Mur, P ;

Fournel, F ;

Séméria, MN ;

Moriceau, H ;

Aspard, B ;

Gentile, P .

MICROELECTRONIC ENGINEERING, 2002, 61-2 :511-515

[4] Atomic force microscopy and ellipsometry study of the nucleation and growth mechanism of polycrystalline silicon films on silicon dioxide [J].

Basa, C ;

Tinani, M ;

Irene, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04) :2466-2479

[5] NUCLEATION AND GROWTH OF SILICON BY CVD [J].

BLOEM, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :581-604

[6]

Brune H, 1998, SURF SCI REP, V31, P121, DOI 10.1016/S0167-5729(99)80001-6

[7] Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma [J].

Chen, JH ;

Yoo, WJ ;

Tan, ZYL ;

Wang, YQ ;

Chan, DSH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04) :1552-1558

[8] Growth chemistry of amorphous silicon and amorphous silicon-germanium alloys [J].

Dalal, VL .

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2002, 6 (05) :455-464

[9]

Guarini KW, 2002, ADV MATER, V14, P1290, DOI 10.1002/1521-4095(20020916)14:18<1290::AID-ADMA1290>3.0.CO

[10]

2-N

← 1 2 3 4 →