Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur

被引：138

作者：

Kim, TG ^{[1
]}

Warrender, JM ^{[1
]}

Aziz, MJ ^{[1
]}

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2212051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon supersaturated with up to 0.6 at. % sulfur in solid solution was fabricated by ion implantation and pulsed-laser-melting-induced rapid solidification. The optical absorption coefficient over the range of 1200-2500 nm is uniformly high at similar to 2.5x10(4)/cm, which is at least an order of magnitude greater than the maximum value attributable to free carriers. High crystal quality was confirmed by transmission electron microscopy and ion channeling. The absorption coefficient decreases markedly with subsequent furnace annealing over the range of 200-600 degrees C. We propose that the high absorptivity is due to a broad distribution of sulfur-related localized states within the band gap.

引用

页数：3

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