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Design and test of radiation hard p+n silicon strip detectors for the ATLAS SCT

被引：15
作者：
Andricek, L
Hauff, D
Kemmer, J
Koffeman, E
Lükewille, P
Lutz, G
Moser, HG
Richter, RH
Rohe, T
Soltau, H
Viehl, A
机构：
[1] Max Planck Inst Phys, Werner Heisenberg Inst, D-80805 Munich, Germany
[2] KETEK GmbH, Oberschleissheim, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2000年 / 439卷 / 2-3期
关键词：
silicon detectors; radiation hardness; implanted resistors;
D O I：
10.1016/S0168-9002(99)00901-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Strip detectors covering radiation hardness and large-scale production ability are developed and produced for the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Switzerland). Capacitively coupled p(+)n detectors (p-type strips on n-type substrate) were developed with implanted bias resistors in order to simplify the detector processing addressing the requirements of large-scale production. The detectors were irradiated with 24 GeV protons up to 3 x 10(14) cm(-2) in order to simulate a 10 years operation scenario at LHC. The presented static and signal measurements demonstrate the function of the device concept before and after irradiation. (C) 2000 Elsevier Science B.V. All rights reserved.
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收藏
页码：427 / 441
页数：15
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