Raman spectrum of array-ordered crystalline silicon-nanowires

被引：32

作者：

Liu, JX

Niu, JJ

Yang, DR

Yan, M

Sha, H

机构：

[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou, Peoples R China

[3] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 23卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

nanowires; Raman spectra; phonon confinement model;

D O I：

10.1016/j.physe.2004.03.016

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Array-ordered single-crystal silicon nanowires were fabricated by the nanochannel-aluminal and CVD method. The average length and diameter of the nanowires is about 10 mum and 60 nm, respectively. A study of the Raman spectrum of the nanowires shows that the Raman shift to low frequency is due to the quantum confinement effect, which is discussed by using the phonon confinement model. Also we determine the peaks of the Raman spectrum to be corresponding to that of crystal silicon (c-Si). (C) 2004 Published by Elsevier B.V.

引用

页码：221 / 225

页数：5

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