Reversible structural phase transitions in semiconductor and metal/semiconductor surfaces

被引：24

作者：

Mascaraque, A ^{[1
]}

Michel, EG

机构：

[1] Autonomous Univ Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain

[2] Autonomous Univ Madrid, Inst Univ Ciencia Mat Nicolas Cabrera, Madrid 28049, Spain

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 24期

关键词：

D O I：

10.1088/0953-8984/14/24/308

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We review our current understanding of the reversible phase transitions found in clean semiconductor and metal/semiconductor surfaces. The most important phase transitions are considered in detail, in particular those appearing in Si(001), Ge(001), Si(111), Ge(111), 3C-SiC(001), Pb and Sri on Si(111) and Ge(111), Au/Si(111) and Ag/Si(111). Special emphasis is placed on recent experiments and theoretical models, as well as on open or controversial aspects of these interesting surface systems.

引用

页码：6005 / 6035

页数：31

共 177 条

[1] CORE-LEVEL STUDY OF THE PHASE-TRANSITION ON THE GE(111)-C(2X8) SURFACE [J].

AARTS, J ;

HOEVEN, AJ ;

LARSEN, PK .

PHYSICAL REVIEW B, 1988, 38 (06) :3925-3930

[2] CHIRAL MELTING OF THE SI(113)(3X1) RECONSTRUCTION [J].

ABERNATHY, DL ;

SONG, S ;

BLUM, KI ;

BIRGENEAU, RJ ;

MOCHRIE, SGJ .

PHYSICAL REVIEW B, 1994, 49 (04) :2691-2705

[3] SURFACE PHASE-TRANSITIONS ON CLEAN GE(111) STUDIED BY SPECTROSCOPIC ELLIPSOMETRY [J].

ABRAHAM, M ;

LELAY, G ;

HILA, J .

PHYSICAL REVIEW B, 1990, 41 (14) :9828-9835

[4] Asymmetric structure of the Si(111)-√3 x √3-Ag surface [J].

Aizawa, H ;

Tsukada, M ;

Sato, N ;

Hasegawa, S .

SURFACE SCIENCE, 1999, 429 (1-3) :L509-L514

[5] Disordering of the low-temperature c(4x2) structure of Ge(001) to the (2x1) reconstruction: Evidence for a mean-field transition [J].

Alvarez, J ;

Etgens, VH ;

Torrelles, X ;

vanderVegt, HA ;

Fajardo, P ;

Ferrer, S .

PHYSICAL REVIEW B, 1996, 54 (08) :5581-5585

[6] STRUCTURE-ANALYSIS OF AG OVERLAYERS ON SI(111) BY LOW-ENERGY LI+ ION-SCATTERING [J].

AONO, M ;

SOUDA, R ;

OSHIMA, C ;

ISHIZAWA, Y .

SURFACE SCIENCE, 1986, 168 (1-3) :713-723

[7] Temperature-induced semiconducting c(4 x 2) double left right arrow metallic (2 x 1) reversible phase transition on the beta-SiC(100) surface [J].

Aristov, VY ;

Douillard, L ;

Fauchoux, O ;

Soukiassian, P .

PHYSICAL REVIEW LETTERS, 1997, 79 (19) :3700-3703

[8] Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III) [J].

Avila, J ;

Mascaraque, A ;

Michel, EG ;

Asensio, MC ;

LeLay, G ;

Ortega, J ;

Pérez, R ;

Flores, F .

PHYSICAL REVIEW LETTERS, 1999, 82 (02) :442-445

[9]

BAUER E, 1987, SPRINGER TOPICS CURR, V43

[10] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J].

BECKER, RS ;

SWARTZENTRUBER, BS ;

VICKERS, JS ;

KLITSNER, T .

PHYSICAL REVIEW B, 1989, 39 (03) :1633-1647

← 1 2 3 4 5 6 7 8 9 10 →