Reversible structural phase transitions in semiconductor and metal/semiconductor surfaces

被引:24
作者
Mascaraque, A [1 ]
Michel, EG
机构
[1] Autonomous Univ Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain
[2] Autonomous Univ Madrid, Inst Univ Ciencia Mat Nicolas Cabrera, Madrid 28049, Spain
关键词
D O I
10.1088/0953-8984/14/24/308
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We review our current understanding of the reversible phase transitions found in clean semiconductor and metal/semiconductor surfaces. The most important phase transitions are considered in detail, in particular those appearing in Si(001), Ge(001), Si(111), Ge(111), 3C-SiC(001), Pb and Sri on Si(111) and Ge(111), Au/Si(111) and Ag/Si(111). Special emphasis is placed on recent experiments and theoretical models, as well as on open or controversial aspects of these interesting surface systems.
引用
收藏
页码:6005 / 6035
页数:31
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