Plasma-Assisted ALD of TiN/Al2O3 Stacks for MIMIM Trench Capacitor Applications

被引：5

作者：

Hoogeland, D. ^{[1
]}

Jinesh, K. B. ^{[2
]}

Voogt, F. C. ^{[3
]}

Besling, W. F. A. ^{[2
]}

Lamy, Y. ^{[2
]}

Roozeboom, F. ^{[1
,2
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands

[2] NXP Semicond, NL-5656 AE Eindhoven, Netherlands

[3] CNXP Semicond, NL-6534 AE Nijmegen, Netherlands

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 5 | 2009年 / 25卷 / 04期

关键词：

DEPOSITION; REACTOR; AL2O3; HFO2;

D O I：

10.1149/1.3205073

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper we report on the overall plasma-assisted ALD processes of Al2O3 and TiN conducted in a single reactor chamber and at a single temperature (340 degrees C). The individual Al2O3 and TiN films in the stack were consecutively deposited in such a way that they were separated by purge intervals ranging from 15 to 300 s. Time-resolved mass spectrometry, TOF-SIMS depth profiles and C-V measurements of the deposited stacks show practically no evidence of precursor cross-contamination by the individual TiN and Al2O3 deposition steps. Based on these results and previous work on planar plasma-assisted ALD TiN/Al2O3/Si MOS capacitor structures, the way was paved to deposit a TiN/Al2O3/TiN/Al2O3 stack on high aspect ratio (similar to 17) structures in silicon. Step coverages of at least similar to 90 % and similar to 40 % are consistently obtained for the deposited Al2O3 and TiN layers, respectively. The trench capacitors demonstrated leakage current densities of 10(-8) - 10(-7) A/cm(2), a capacitance density of 180 nF/mm(2) and dielectric breakdown field values of 6 - 9 MV/cm.

引用

页码：389 / 397

页数：9

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