Plasma-Assisted ALD of TiN/Al2O3 Stacks for MIMIM Trench Capacitor Applications

被引:5
作者
Hoogeland, D. [1 ]
Jinesh, K. B. [2 ]
Voogt, F. C. [3 ]
Besling, W. F. A. [2 ]
Lamy, Y. [2 ]
Roozeboom, F. [1 ,2 ]
van de Sanden, M. C. M. [1 ]
Kessels, W. M. M. [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands
[2] NXP Semicond, NL-5656 AE Eindhoven, Netherlands
[3] CNXP Semicond, NL-6534 AE Nijmegen, Netherlands
来源
ATOMIC LAYER DEPOSITION APPLICATIONS 5 | 2009年 / 25卷 / 04期
关键词
DEPOSITION; REACTOR; AL2O3; HFO2;
D O I
10.1149/1.3205073
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this paper we report on the overall plasma-assisted ALD processes of Al2O3 and TiN conducted in a single reactor chamber and at a single temperature (340 degrees C). The individual Al2O3 and TiN films in the stack were consecutively deposited in such a way that they were separated by purge intervals ranging from 15 to 300 s. Time-resolved mass spectrometry, TOF-SIMS depth profiles and C-V measurements of the deposited stacks show practically no evidence of precursor cross-contamination by the individual TiN and Al2O3 deposition steps. Based on these results and previous work on planar plasma-assisted ALD TiN/Al2O3/Si MOS capacitor structures, the way was paved to deposit a TiN/Al2O3/TiN/Al2O3 stack on high aspect ratio (similar to 17) structures in silicon. Step coverages of at least similar to 90 % and similar to 40 % are consistently obtained for the deposited Al2O3 and TiN layers, respectively. The trench capacitors demonstrated leakage current densities of 10(-8) - 10(-7) A/cm(2), a capacitance density of 180 nF/mm(2) and dielectric breakdown field values of 6 - 9 MV/cm.
引用
收藏
页码:389 / 397
页数:9
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