High performance organic thin-film transistors with photopatterned gate dielectric

The authors have fabricated high performance pentacene organic thin-film transistor (OTFT) using photopatternable poly(4-vinylphenol) gate dielectric on plastic substrate. The dielectric layer was composed of poly(vinylphenol), 1,2,4,5-tetraacetoxymethylbenzene, and 2,4-bis(trichloro methyl)-6-aryl-1,3,5-triazine. The 1,2,4,5-tetraacetoxymethylbenzene is a cross-linking material which is synthesized by a two-step reaction. The gate dielectric was patterned by spin coating and UV exposure. The OTFT with photopatterned gate dielectric exhibited a field-effect mobility of 1.23 cm(2)/V s and a threshold voltage of -6.5 V and an on/off current ratio of 10(7), so that the OTFT can be applied to make a high performance display. (c) 2007 American Institute of Physics.