Spatially localized dynamic properties of individual interfaces in semiconducting oxides

被引：29

作者：

Huey, BD ^{[1
]}

Bonnell, DA ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local electronic property variations at individual interfaces have been determined using scanning surface potential microscopy, a variant of atomic force microscopy in conjunction with locally applied electric fields. Micropatterning is used to isolate individual interfaces and position contacts so that biases can be controlled locally. Positional variations in the voltage dependent interface charge and density of states in polycrystalline zinc oxide are determined from surface potential imaging. (C) 2000 American Institute of Physics. [S0003-6951(00)00708-7].

引用

页码：1012 / 1014

页数：3

共 18 条

[1] IN-SITU MEASUREMENT OF ELECTRIC-FIELDS AT INDIVIDUAL GRAIN-BOUNDARIES IN TIO2 [J].

BONNELL, DA ;

HUEY, B ;

CARROLL, D .

SOLID STATE IONICS, 1995, 75 :35-42

[2] MEASUREMENT OF SPACE-CHARGE ADJACENT TO OXIDE GRAIN-BOUNDARIES BY TUNNELING SPECTROSCOPY [J].

BONNELL, DA ;

SOLOMON, I .

ULTRAMICROSCOPY, 1992, 42 :788-792

[3] Schottky-barrier formation at nanoscale metal-oxide interfaces [J].

Carroll, DL ;

Wagner, M ;

Ruhle, M ;

Bonnell, DA .

PHYSICAL REVIEW B, 1997, 55 (15) :9792-9799

[4] ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE COMPOUND SEMICONDUCTORS [J].

GREUTER, F ;

BLATTER, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (02) :111-137

[5] MICROSTRUCTURAL ENGINEERING THROUGH DONOR AND ACCEPTOR DOPING IN THE GRAIN AND GRAIN-BOUNDARY OF A POLYCRYSTALLINE SEMICONDUCTING CERAMIC [J].

GUPTA, TK .

JOURNAL OF MATERIALS RESEARCH, 1992, 7 (12) :3280-3295

[6] Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis [J].

Henning, AK ;

Hochwitz, T .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3) :88-98

[7] Nanometer-scale variations in interface potential by scanning probe microscopy [J].

Huey, BD ;

Lisjak, D ;

Bonnell, DA .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (07) :1941-1944

[8]

HUEY BD, UNPUB

[9] Surface potential mapping: A qualitative material contrast in SPM [J].

Jacobs, HO ;

Knapp, HF ;

Muller, S ;

Stemmer, A .

ULTRAMICROSCOPY, 1997, 69 (01) :39-49

[10]

Kienzle O, 1997, J AM CERAM SOC, V80, P1639, DOI 10.1111/j.1151-2916.1997.tb03032.x

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