Are carbon nanotubes the future of VLSI interconnections?

被引：87

作者：

Banerjee, Kaustav ^{[1
]}

Srivastava, Navin ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

来源：

43RD DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2006 | 2006年

关键词：

performance; design; reliability; experimentation; theory; carbon nanotubes; interconnects; VLSI;

D O I：

10.1109/DAC.2006.229330

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Increasing resistivity of copper with scaling and rising demands on current density requirements are driving the need to identify new wiring solutions for deep nanometer scale VLSI technologies. Metallic carbon nanotubes (CNTs) are promising candidates that can potentially address the challenges faced by copper and thereby extend the lifetime of electrical interconnects. This paper examines the state-of-the-art in CNT interconnect research and discusses both the advantages and challenges of this emerging nanotechnology.

引用

页码：809 / 814

页数：6

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