Enhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics

被引:22
作者
Yang, Sang Yoon
Shin, Kwonwoo
Kim, Se Hyun
Jeon, Hayoung
Kang, Jin Ho
Yang, Hoichang [1 ]
Park, Chan Eon
机构
[1] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA
[2] Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, Pohang 790784, South Korea
[3] NIA, NASA LaRC, Hampton, VA 23681 USA
关键词
ATOMIC-FORCE MICROSCOPY; TRANSISTORS; TRANSPORT; MORPHOLOGY; MOBILITY; GROWTH; MONOLAYER; OXIDE;
D O I
10.1021/jp0646527
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.
引用
收藏
页码:20302 / 20307
页数:6
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