Universal distribution of residual carriers in tetrahedrally coordinated amorphous semiconductors

被引：38

作者：

Yan, BJ ^{[1
]}

Schultz, NA ^{[1
]}

Efros, AL ^{[1
]}

Taylor, PC ^{[1
]}

机构：

[1] Univ Utah, Dept Phys, Salt Lake City, UT 84112 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.84.4180

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An uncommon electron spin resonance technique is used to show that a universal distribution of residual carriers exists in tetrahedrally coordinated amorphous semiconductors following optical excitation at low temperatures. This universal behavior at long decay times results because statistical fluctuations in the electron and hole densities cannot occur and therefore do not affect the kinetics. This behavior is: confirmed for carrier densities between 10(16) and 10(17) cm(-3) and decay times as long as 10(4) s.

引用

页码：4180 / 4183

页数：4

共 24 条

[1]

Baranovskii S. D., 1989, Soviet Physics - JETP, V69, P773

[2]

BARANOVSKII SD, 1987, ZH EKSP TEOR FIZ, V65, P1260

[3] NON-GEMINATE RECOMBINATION IN AMORPHOUS-SILICON [J].