Optimisation of borophosphosilicate glass compositions for silica-on-silicon integrated optical circuits fabricated by the sol-gel process

被引：16

作者：

Syms, RRA

Huang, W

Schneider, VM

机构：

[1] Optical Semiconduct. Devices Sect., Dept. of Elec. and Electron. Eng., Imp. Coll. Sci., Technol. and Med., London SW7 2BT, Exhibition Road

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 13期

关键词：

sol-gel processing; integrated optoelectronics; borosilicate glasses;

D O I：

10.1049/el:19960787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silica-on-silicon channel guide devices fabricated in sol-gel borophosphosilicate glass deposited by repetitive spin-coating and rapid thermal annealing (SC-RTA) are described. Process parameters for a wide range of glass compositions are given. The optimum performance is obtained using a borosilicate buffer layer, a phosphosilicate core and a borophosphosilicate cladding with a low melting point. Low-loss thermo-optic interferometric modulators fabricated by this process are described.

引用

页码：1233 / 1234

页数：2

共 7 条

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