STRESS IN THICK SOL-GEL PHOSPHOSILICATE GLASS-FILMS FORMED ON SI SUBSTRATES

被引：23

作者：

SYMS, RRA

机构：

[1] Optical and Semiconductor Devices Section, Department of Electrical and Electronic Engineering, Imperial College of Science, Technology and Medicine, London, Exhibition Road

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 167卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(94)90361-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is shown that thick (> 10 mum) films of phosphosilicate glass may be formed on silicon substrates by repetitive spin-coating and rapid thermal annealing of commercial sol-gel material. The viability of the process is explained in terms of film stresses, and it is demonstrated that annealing above a critical temperature is necessary to prevent stress failure.

引用

页码：16 / 20

页数：5

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