STRESS MEASUREMENTS OF THERMALLY GROWN THIN OXIDES ON (100) SI SUBSTRATES

被引：31

作者：

MACK, LM ^{[1
]}

REISMAN, A ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27965

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 11期

关键词：

D O I：

10.1149/1.2096466

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3433 / 3437

页数：5

共 23 条

[1]

BOLZ RE, 1973, HDB TABLES APPLIED E, P187

[2] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[3] STRESS EVOLUTION AND POINT-DEFECT GENERATION DURING OXIDATION OF SILICON [J].

CHARITAT, G ;

MARTINEZ, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :909-913

[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[5] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J].

DOREMUS, RH .

THIN SOLID FILMS, 1984, 122 (03) :191-196

[6]

EARNISSE EP, 1979, APPL PHYS LETT, V35, P8

[7] DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW [J].

FARGEIX, A ;

GHIBAUDO, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :7153-7158

[8] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J].

FARGEIX, A ;

GHIBAUDO, G ;

KAMARINOS, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2878-2880

[9]

Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[10] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].

IRENE, EA ;

TIERNEY, E ;

ANGILELLO, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2594-2597

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