Spatial distribution of the electronic wave function of the shallow boron acceptor in 4H- and 6H-SiC

被引:23
作者
van Duijn-Arnold, A
Mol, J
Verberk, R
Schmidt, J
Mokhov, EN
Baranov, PG
机构
[1] Leiden Univ, Huygens Lab, NL-2300 RA Leiden, Netherlands
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1103/PhysRevB.60.15829
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A high-frequency (95 GHz) pulsed electron paramagnetic resonance and electron-nuclear-double-resonance study has been carried out on the shallow boron acceptor:in C-13-enriched 4H-SiC and 6H-SiC. From the hyperfine interaction of the unpaired electron spin with the C-13 (I=1/2) nuclei the spatial distribution of the electronic wave function has been established. It is found that there are subtle differences in the degree of localization of this wave function between the different sites (two quasicubic and one hexagonal) in the two polytypes 4H-SiC and 6H-SiC, though only for the two quasicubic sites a complete study of the wave function could be made. In particular it is found that,the spatial distribution is highly anisotropic. This anisotropy can be rationalized by considering the anisotropy of the hole mass, i.e., by assuming that effective-mass theory is (partly) valid in describing the remote part of the spatial distribution of the electronic wave function. [S0163-1829(99)16135-6].
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页码:15829 / 15847
页数:19
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