Acceptor impurities in silicon carbide: Electron paramagnetic resonance and optically detected magnetic resonance studies

被引：19

作者：

Baranov, PG ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

DEFECT AND DIFFUSION FORUM | 1997年 / 148卷

关键词：

silicon carbide; acceptors; defects; electron paramagnetic resonance; optically detected magnetic resonance;

D O I：

10.4028/www.scientific.net/DDF.148-149.129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of electron paramagnetic resonance and optically detected magnetic resonance in the study of accepters in silicon carbide is reviewed in this article. The review deals in detail with the various accepters impurities found in silicon carbide, treating group-III shallow and deep accepters, beryllium and scandium accepters.

引用

页码：129 / 160

页数：32

共 66 条

[1] FURTHER EVIDENCE FOR THE B-SI(-)-C+ MODEL OF THE BORON ACCEPTOR IN 6H SILICON-CARBIDE FROM A THEORETICAL-ANALYSIS OF THE HYPERFINE INTERACTIONS [J].