Field Effects on Optical Phonons in Bilayer Graphene

被引：63

作者：

Ando, Tsuneya ^{[1
]}

Koshino, Mikito ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2009年 / 78卷 / 03期

关键词：

graphene; bilayer; two-dimensional graphite; electron-phonon interaction; optical phonon; broadening; ELECTRONIC-PROPERTIES; TRANSPORT-PROPERTIES; BAND-STRUCTURE; BERRYS PHASE; GRAPHITE; CONDUCTIVITY; STATES;

D O I：

10.1143/JPSJ.78.034709

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Effects of electron-phonon interaction oil the optical-phonon spectrum are studied within the lowest order perturbation in a bilayer graphene with potential difference associated with applied electric field. Due to the asymmetry of two layers, symmetric and antisymmetric modes are strongly mixed with each other and two peaks appear in Raman spectra. This behavior can also be controlled by a field due to an extra top gate. When the external field is sufficiently strong and opens up a gap comparable to the phonon energy, the phonons are modified considerably by resonant interband transitions.

引用

页数：8

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