Materials science - Silicon carbide in contention

被引：174

作者：

Madar, R ^{[1
]}

机构：

[1] Inst Natl Polytech Grenoble, Dept Phys, CNRS, F-38402 Grenoble, France

来源：

NATURE | 2004年 / 430卷 / 7003期

关键词：

D O I：

10.1038/430974a

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Silicon carbide is a highly desirable material for high-power electronic devices — more desirable even than silicon. And now the problem of producing large, pure wafers of the carbide could be solved.

引用

页码：974 / 975

页数：2

共 4 条

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SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1259-1264

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Nakamura, D ;

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Takatori, K .

NATURE, 2004, 430 (7003) :1009-1012

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Peters, D ;

Friedrichs, P ;

Schörner, R ;

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SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1125-1128

[4] INVESTIGATION OF GROWTH PROCESSES OF INGOTS OF SILICON-CARBIDE SINGLE-CRYSTALS [J].

TAIROV, YM ;

TSVETKOV, VF .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (02) :209-212

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