Thin film deposition of GexCyHz by radiolysis of GeH4-C3H8 mixtures

被引：9

作者：

Benzi, P ^{[1
]}

Castiglioni, M ^{[1
]}

Truffa, E ^{[1
]}

Volpe, P ^{[1
]}

机构：

[1] UNIV TURIN,DIPARTIMENTO CHIM GEN & ORGAN APPL,I-10125 TURIN,ITALY

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1996年 / 6卷 / 09期

关键词：

D O I：

10.1039/jm9960601507

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous hydrogenated films of germanium carbides have been prepared by radiolysis of GeH4-C3H8 mixtures in the 430-570 K temperature range. Ge/C ratios range from 0.67 to 76 and Ge/H ratios from 0.22 to 10.8 according to the deposition temperature and the gas-phase composition. The corresponding bandgaps range from 1.58 to 1.04 eV. The effect of sp(2) and sp(3) carbon is discussed.

引用

页码：1507 / 1509

页数：3

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