Current-transport properties of atomic-layer-depo sited ultrathin Al2O3 on GaAs

被引：21

作者：

Lin, H. C.

Ye, P. D.

Wilk, G. D.

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] ASM Amer, Phoenix, AZ 85034 USA

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 06期

关键词：

atomic layer deposition; GaAs MOSFET; thermal-activation energy;

D O I：

10.1016/j.sse.2006.04.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of the state-of-the-art SiO2 on Si, not counting on high dielectric constant for Al2O3. By measuring leakage current at a wide range of temperatures from 133 K to 475 K, we are able to identify the electron transport mechanism and measure the thermal-activation energy of the ultrathin oxide films. This thermal-activation energy is proposed as a parameter to generally characterize the quality of ultrathin dielectrics on semiconductors. (c) 2006 Elsevier Ltd. All rights reserved.

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页码：1012 / 1015

页数：4

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