Hole resonant tunneling through SiC/Si-dot/SiC heterostructures

被引：7

作者：

Ikoma, Y ^{[1
]}

Uchiyama, K ^{[1
]}

Watanabe, F ^{[1
]}

Motooka, T ^{[1
]}

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8128581, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

AFM; resonant tunneling diodes; supersonic free jet CVD;

D O I：

10.4028/www.scientific.net/MSF.389-393.751

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on p(+)-Si(100) substrates. The surface morphology and current-voltage characteristics were observed by means of atomic force microscopy. The current peaks and negative differential resistance were observed in the current-voltage curves. Numerical calculations showed that the observed current-voltage characteristics were due to the hole resonant tunneling through the SiC double barrier structure.

引用

页码：751 / 754

页数：4

共 13 条

[1]

BROWN ER, 1994, HETEROSTRUCTURES QUA, P305

[2]

FRENSLEY WR, 1994, HETEROSTRUCTURES QUA, P273

[3] Resonant tunneling through a self-assembled Si quantum dot [J].