Resonant tunneling through a self-assembled Si quantum dot

被引:92
作者
Fukuda, M
Nakagawa, K
Miyazaki, S
Hirose, M
机构
[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739
关键词
D O I
10.1063/1.118816
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanometer-scale Si quantum dots have been spontaneously fabricated on SiO2 by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/l nm-SiO2/a single Si quantum dot/l nm-SiO2/n(+)-Si(100) double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10. (C) 1997 American Institute of Physics.
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页码:2291 / 2293
页数:3
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