Complementary organic field effect transistors by ultraviolet dielectric interface modification

被引：41

作者：

Benson, Niels ^{[1
]}

Schidleja, Martin ^{[1
]}

Melzer, Christian ^{[1
]}

Schmechel, Roland ^{[1
]}

von Seggern, Heinz ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Sci Mat, D-64287 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期

关键词：

D O I：

10.1063/1.2372702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The realization of p- and n-type pentacene organic field effect transistors and an organic inverter stage is reported based on selective ultraviolet (UV) modification of the polymer dielectric in air. Apart from the UV radiation treatment, the device structures are identical. The achieved field effect carrier mobilities for both transistor types are approximate to 0.1 cm(2)/V s. Similar performance data for both transistor types as well as an observed low current hysteresis qualify the UV treatment for organic complementary metal oxide semiconductor (O-CMOS) technology. The realized O-CMOS inverter exhibits stable operation below its supply voltage, as well as a gain of 17. (c) 2006 American Institute of Physics.

引用

页数：3

共 9 条

[1] Complementary inverter based on interface doped pentacene [J].