Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition

被引:157
作者
Ehbrecht, M [1 ]
Kohn, B [1 ]
Huisken, F [1 ]
Laguna, MA [1 ]
Paillard, V [1 ]
机构
[1] UNIV TOULOUSE 3, PHYS SOLIDES LAB, F-31062 TOULOUSE 4, FRANCE
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 11期
关键词
D O I
10.1103/PhysRevB.56.6958
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon clusters and nanocrystals have been generated by CO2-laser-induced decomposition of SiH4 in a flow reactor. By introducing a conical nozzle into the reaction zone, the clusters are extracted into a molecular-beam machine and analyzed with a time-of-flight mass spectrometer (TOFMS). Since the clusters have a size-dependent velocity, a mechanical velocity selector is used to further narrow their size distribution and to select a specific mean size. Employing this technique, silicon clusters with different preselected mean sizes have been deposited at low energy on various substrates. Photoluminescence (PL) and resonant Raman spectra of the resulting films are presented. The crystallite sizes deduced from the Raman spectra confirm the TOFMS measurements. The PL spectra are shifted with decreasing cluster size to smaller wavelengths. Our results agree very well with theoretical predictions for silicon quantum dots.
引用
收藏
页码:6958 / 6964
页数:7
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