学术探索
学术期刊
新闻热点
数据分析
智能评审

The influence of surface oxidation on the pH-sensing properties of silicon nitride

被引：27
作者：
Mikolajick, T
Kühnhold, R
Schnupp, R
Ryssel, H
机构：
[1] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany
[2] Fraunhofer Inst Integrated Circuit IISB, D-91058 Erlangen, Germany
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1999年 / 58卷 / 1-3期
关键词：
silcon nitride; surface oxidation; pH-sensing properties; site-binding theory;
D O I：
10.1016/S0925-4005(99)00125-2
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The pH-sensing properties of silicon nitride were studied with special emphazise on surface oxidation. Simulations of the surface potential and the sensitivity were performed using the site binding theory to show the influence of an oxygen rich surface and surface oxidation of silicon nitride. Samples were produced by depositing silicon nitride in a LPCVD process with how ratios of the processing gases NH3 and SiCl2H2 ranging from 2 to 20. The samples were characterized by XPS and capacitance-voltage measurements of EIS-structures. Silicon nitride etched in buffered HF before measurement showed a pH-sensitivity of up to 58 mV pH(-1), and an increasing hysteresis was found with increasing NH3/SiCl2H2 gas-flow ratios during deposition. Samples not etched had only a pH-sensitivity between 45 and 52 mV pH(-1) because of their oxygen rich surface layer. The oxygen rich layer was found to be approx. 4 nm deep and soluble in buffer electrolyte. Surface oxidation and dissolution of the oxygen rich layer is claimed to be decisive for the pH-sensing properties of silicon nitride. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：450 / 455
页数：6
相关论文
共 13 条
[1]  
Bergveld P., 1988, Analytical and Biomedical Applications of Ion-Selective Field-Effect Transistors
[2]   COMPARISON OF THE HYSTERESIS OF TA2O5 AND SI3N4 PH-SENSING INSULATORS [J].
BOUSSE, L ;
MOSTARSHED, S ;
VANDERSCHOOT, B ;
DEROOIJ, NF .
SENSORS AND ACTUATORS B-CHEMICAL, 1994, 17 (02) :157-164
[3]   OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE [J].
BOUSSE, L ;
DEROOIJ, NF ;
BERGVELD, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1263-1270
[4]   STABILITY OF SILICON-NITRIDE SILICON DIOXIDE SILICON ELECTRODES USED IN PH MICROELECTRONIC SENSORS [J].
CHAUVET, F ;
AMARI, A ;
MARTINEZ, A .
SENSORS AND ACTUATORS, 1984, 6 (04) :255-267
[5]   IMPROVEMENT OF STRUCTURAL INSTABILITY OF THE ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET) [J].
CHEN, KM ;
LI, GH ;
CHEN, LX ;
ZHU, Y .
SENSORS AND ACTUATORS B-CHEMICAL, 1993, 13 (1-3) :209-211
[6]   STUDY OF INSULATOR MATERIALS USED IN ISFET GATES [J].
COHEN, RM ;
HUBER, RJ ;
JANATA, J ;
URE, RW ;
MOSS, SD .
THIN SOLID FILMS, 1978, 53 (02) :169-173
[7]  
GARDE A, 1995, SENSOR ACTUAT B-CHEM, V26, P341
[8]   OXIDATION OF SILICON (OXY)NITRIDE AND NITRIDATION OF SILICON DIOXIDE - MANIFESTATIONS OF THE SAME CHEMICAL-REACTION SYSTEM [J].
HABRAKEN, FHPM ;
KUIPER, AET .
THIN SOLID FILMS, 1990, 193 (1-2) :665-674
[9]   ION-SENSING DEVICES WITH SILICON-NITRIDE AND BOROSILICATE GLASS INSULATORS [J].
HARAME, DL ;
BOUSSE, LJ ;
SHOTT, JD ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1700-1707
[10]   The pH-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition [J].
Mikolajick, T ;
Kuhnhold, R ;
Ryssel, H .
SENSORS AND ACTUATORS B-CHEMICAL, 1997, 44 (1-3) :262-267
12