Effect of operating temperature and film thickness on the pyroelectric response of ferroelectric materials

被引：23

作者：

Sharma, A

Ban, ZG

Alpay, SP ^{[1
]}

Mantese, JV

机构：

[1] Univ Connecticut, Dept Met & Mat Engn, Storrs, CT 06269 USA

[2] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA

[3] Delphi Res Labs, Shelby Township, MI 48315 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 24期

关键词：

D O I：

10.1063/1.1762691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the operating temperature and film thickness on the pyroelectric properties of (001) Ba0.6Sr0.4TiO3 (BST 60/40) epitaxial films on (001) LaAlO3, MgO, and Si substrates is investigated theoretically via a thermodynamic model. The results are presented using contour maps that can be used to identify "design windows" for film thickness and operating temperature for optimum pyroelectric response. For BST 60/40 on LAO and MgO large pyroelectric coefficients (similar to0.7 muC cm(-2) K-1) are observed at near room temperature for moderate film thickness (50-200 nm). The pyroresponse of films on Si is suppressed by two orders of magnitude compared to bulk BST 60/40 due to internal stresses. Significant recovery in the pyroelectric coefficient on Si is expected for lower growth temperatures due to the reduction of thermal stresses. (C) 2004 American Institute of Physics.

引用

页码：4959 / 4961

页数：3

共 12 条

[1] The role of connectivity in thermal imaging [J].