Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1-x) grown by rotatory Bridgman method

被引：14

作者：

Dixit, VK

Bansal, B

Venkataraman, V

Bhat, HL ^{[1
]}

Subbanna, GN

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[2] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.1504163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radially-homogeneous and single-phase InAsxSb(1-x) crystals, up to 5.0 at. % As concentration, have been grown using the rotatory Bridgman method. Single crystallinity has been confirmed by x-ray and electron diffraction studies. Infrared transmission spectra show a continuous decrease in optical energy gap with the increase of arsenic content in InSb. The measured values of mobility and carrier density at room temperature (for x=.05) are 5.6x10(4) cm(2)/V s and 2.04x10(16) cm(-3), respectively. (C) 2002 American Institute of Physics.

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页码：1630 / 1632

页数：3

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