Growth of InSb(1-x)Bix crystals by rotatory Bridgman method and their characterization

被引：10

作者：

Dixit, VK ^{[1
]}

Rodrigues, BV ^{[1
]}

Bhat, HL ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 217卷 / 1-2期

关键词：

crystal growth; rotatoty Bridgman method; InSb(1-x)Bix; ACRT; LWIR;

D O I：

10.1016/S0022-0248(00)00460-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The rotatory Bridgman method was used to grow ternary InSb(1-x)Bix crystals. In this method the ampoule was subjected to ACRT like reversible rotation at a peak rate of 60 rpm. High-quality crystals of 8 mm diameter and 25 mm length were grown with 6.54 atomic percentage of Bi. The grown crystals were characterized employing various techniques such as energy-dispersive X-ray analysis, X-ray diffraction, differential scanning calorimetery, infrared spectroscopy and Hall measurement. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：40 / 46

页数：7

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