Plasma immersion ion implantation for metallurgical and semiconductor research and development

Plasma Source Ion Implantation, also termed Plasma Immersion Ion Implantation, is a rapidly developing material modification technique for treating the near-surface regions of various kinds of materials. It makes use of high-energy ions which are accelerated by a high voltage pulse from a plasma which wraps the workpiece to be treated. The ions are implanted into the material causing effects similar to those of conventional beam-line ion implantation. Research and development of plasma immersion ion implantation has focused in two main fields, treatment of metals for improved wear and corrosion performance, and modification of semiconductors. The paper discusses examples from both fields, with nitrogen PIII of steels and aluminum, and modification of thin metal films. From the semiconductor field, trenchwall doping, ultra-shallow doping with boron, and oxygen ion implantation for SIMOX formation is treated.