Laser-induced bond breaking of the adatoms of the Si(111)-7x7 surface

被引：20

作者：

Ishikawa, K

Kanasaki, J

Nakai, Y

Itoh, N

机构：

[1] Department of Physics, Nagoya University, Nagoya 464-01, Furocho, Chikusaku

来源：

SURFACE SCIENCE | 1996年 / 349卷 / 03期

关键词：

desorption induced by electronic transition (DIET); scanning tunneling microscopy; silicon; surface defects;

D O I：

10.1016/0039-6028(95)01346-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Tunneling images of the Si(111)-7 x 7 surface before and after laser irradiation have been compared. Examination of more than 300 unit cells shows that the number of unit cells with missing center adatoms increases by 2.48 eV laser pulse irradiation at fluences slightly above the threshold laser fluence above which the emissions can be detected. No indication of melting is observed in the unit cells with missing adatoms. The results give clear evidence that laser-induced atomic emissions from semiconductor surfaces are electronic and site selective.

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收藏

页码：L153 / L158

页数：6

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