Growth process and characterization of magnetic semiconductors based on GeMn alloy films

被引：7

作者：

Pinto, N ^{[1
]}

Morresi, L ^{[1
]}

Murri, R ^{[1
]}

D'Orazio, F ^{[1
]}

Lucari, F ^{[1
]}

Passacantando, M ^{[1
]}

Picozzi, P ^{[1
]}

机构：

[1] Univ Camerino, INFM, Dipartimento Fis, I-62032 Camerino, Italy

来源：

PHYSICA STATUS SOLIDI C: MAGNETIC AND SUPERCONDUCTING MATERIALS, PROCEEDINGS | 2004年 / 1卷 / 07期

关键词：

D O I：

10.1002/pssc.200304409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth mechanism of thin Ge1-xMnx/Ge(100) diluted magnetic semiconductor films have been studied by reflection high energy electron diffraction (RHEED) technique and correlated to the structural and magnetic properties of the films provided by X-ray diffraction (XRD) and magneto-optical Kerr effect (MOKE), respectively. The RHEED analysis evidenced a transition from a bi-dimensional to a three-dimensional growth mechanism at deposition temperature, T-G, lower than 433 K while XRD characterization showed a polycrystalline structure with Ge grain size depending on T-G. At low T-G (343 K) all the Ge1-xMnx films behaved superparamagnetically, while at T-G = 433 K hysteresis loops were observed, with a maximum Curie temperature of approximate to 250 K, for 0.027 < x < 0.044. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1748 / 1751

页数：4

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