Noise reduction in LNAs using a conductive path to ground technique in SiGe technology

被引：4

作者：

Alvarado, Javier, Jr. ^{[1
]}

Duster, Jon S. ^{[1
]}

Kornegay, Kevin T. ^{[1
]}

机构：

[1] Cornell Univ, Cornell Broadband Commun Res Lab, Ithaca, NY 14853 USA

来源：

2005 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS | 2005年

关键词：

D O I：

10.1109/ASSCC.2005.251696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A passive noise suppression technique was implemented on a family of monolithic low-noise amplifiers using a 0.5 mu m SiGe BiCMOS process with 47GHz f(T) transistors. This method provides the entire circuit with a conductive path to ground the P- substrate. Near active device regions, noise injection and crosstalk paths are shunted to ground. This technique decreased the LNAs noise figures by 1.88dB, 0.34dB, and 0.82dB at 5.25GHz, 2.45GHz, and 2.14GHz respectively. While DC power consumption is reduced, the gain improved by 5.3dB and 2.5dB at 5.25GHz and 2.14GHz respectively.

引用

页码：185 / 188

页数：4

共 10 条

[1] A 6.25-GHz low DC power low-noise amplifier in SiGe [J].

Ainspan, H ;

Soyuer, M ;

Plouchart, JO ;

Burghartz, J .

PROCEEDINGS OF THE IEEE 1997 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1997, :177-180

[2]

ALVARADO J, 2004, IASTED INT C CIRC SI, P537

[3] Analysis and measurements of EM and substrate coupling effects in common RF integrated circuits [J].

Amaya, RE ;

Popplewell, PHR ;

Cloutier, M ;

Plett, C .

PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2004, :363-366

[4] Low-noise amplifier comparison at 2 GHz in 0.25-μm and 0.18-μm RF-CMOS and SiGe BiCMOS [J].

Floyd, BA ;

Ozis, D .

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, :185-188

[5] Noise figure and impedance matching in RF cascode amplifiers [J].

Girlando, G ;

Palmisano, G .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING, 1999, 46 (11) :1388-1396

[6]

Imbs E, 2003, IEEE MTT S INT MICR, P1569, DOI 10.1109/MWSYM.2003.1210436

[7]

*INF TECHN, 2003, LOW NOIS AMPL 2 3 2

[8]

NGUYEN TK, IEEE T MICROWAVE THE, P538

[9]

ROGIN J, 2004, IEEE J SOLID-ST CIRC, P2239

[10]

2003, MAXIM PRODUCT DATA S

← 1 →