Magnetoresistance of one-dimensional subbands in tunnel-coupled double quantum wires

被引：32

作者：

Moon, JS

Blount, MA

Simmons, JA

Wendt, JR

Lyo, SK

Reno, JL

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.60.11530

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a less than or equal to 1-mu m-thick AlxGa1-xAs/GaAs double-quantum-well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at similar to 6 T is observed with a strong gate voltage dependence. The data are consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of one-dimensional subbands. [S0163-1829(99)00540-8].

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页码：11530 / 11534

页数：5

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