Zinc oxide nanowire networks for macroelectronic devices

被引：46

作者：

Unalan, Husnu Emrah ^{[1
]}

Zhang, Yan ^{[1
]}

Hiralal, Pritesh ^{[1
]}

Dalal, Sharvari ^{[1
]}

Chu, Daping ^{[1
]}

Eda, Goki ^{[2
]}

Teo, K. B. K. ^{[1
]}

Chhowalla, Manish ^{[2
]}

Milne, William I. ^{[1
]}

Amaratunga, Gehan A. J. ^{[1
]}

机构：

[1] Univ Cambridge, Elect Engn Div, Dept Engn, Cambridge CB3 0FA, England

[2] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

II-VI semiconductors; lithography; logic devices; nanowires; percolation; semiconductor quantum wires; thin film transistors; zinc compounds; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ZNO NANOWIRE; FLEXIBLE ELECTRONICS; SOLAR-CELLS; TRANSPARENT; ARRAYS; GROWTH;

D O I：

10.1063/1.3120561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

引用

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