Improved Energy Storage Performance and Fatigue Endurance of Sr-Doped PbZrO3 Antiferroelectric Thin Films

被引：232

作者：

Hao, Xihong ^{[1
,2
]}

Zhai, Jiwei ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Inner Mongolia Univ Sci & Technol, Coll Mat & Met, Baotou 014010, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2009年 / 92卷 / 05期

基金：

中国国家自然科学基金;

关键词：

SOL-GEL PROCESS; LEAD ZIRCONATE; DIELECTRIC-PROPERTIES; CERAMIC DIELECTRICS; ELECTRIC FATIGUE;

D O I：

10.1111/j.1551-2916.2009.03015.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sr-doped PbZrO3 antiferroelectric (AFE) thin films have been fabricated on the platinum-buffered silicon substrates via the sol-gel technique. The temperature-dependent dielectric properties results indicated that the AFE phase was stabilized for the Sr-modified PbZrO3 thin films with a Curie temperature of 251 degrees C. The recoverable energy density and energy efficiency of the Sr-doped PbZrO3 thin films were enhanced by the doping of strontium. Compared with the pure PbZrO3 AFE thin films, the performance against fatigue of the Sr-doped PbZrO3 thin films were also improved greatly.

引用

页码：1133 / 1135

页数：3

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