Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O3 (PLZST) antiferroelectric thin films by modified sol-gel process using a novel tin source, dibutyloxide of tin

被引：10

作者：

Hao, Xihong ^{[1
]}

Zhai, Jiwei ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2007年 / 42卷 / 03期

基金：

中国国家自然科学基金;

关键词：

antiferroelectric thin film; sol-gel process; phase transformation; electric property;

D O I：

10.1007/s10971-007-0765-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly (111)-oriented Pb0.97La0.02Zr0.85Sn0.13Ti0.02O3(PLZST) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates through a modified sol-gel process technique. The electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transformation behaviour was examined by C-V measurement. The results indicated that antiferroelectric (AFE) to ferrroelectric (FE) switching field EFE-AFE were 315 kV/cm and 240 kV/cm respectively. The temperature dependence of the dielectric constant showed that the Curie temperature (T-c) of the PLZST antiferroelectric thin films was 171 degrees C. The voltage dependent current density of the highly (111)-oriented PLZST film was less than 1.3 x 10(-6) A/cm(2) over electric field range from 0 to +/- 427 kV/cm.

引用

页码：365 / 368

页数：4

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