Preparation of antiferroelectric PbZrxTi1-xO3 thin films on LaSrMnO3-coated steel substrates

被引:38
作者
Seveno, R
Gundel, HW
Seifert, S
机构
[1] Univ Nantes, Lab Phys Isolants & Optron, EA 3254, F-44322 Nantes, France
[2] Fraunhofer Inst Silicatforsch, D-97082 Wurzburg, Germany
关键词
D O I
10.1063/1.1426695
中图分类号
O59 [应用物理学];
学科分类号
摘要
Antiferroelectric lead zirconate titanate (PZT) thin films have been prepared by chemical solution deposition using oxide powders. The films were processed onto steel substrates coated with a conducting oxide layer of LaSrMnO3. Homogeneous and uniform films up to 3.4 mum thick and with polarization saturation values up to 35 muC/cm(2) have been obtained. The compositional transition from the ferroelectric to the antiferroelectric phase at the high zirconium side of the PZT phase diagram was studied by x-ray diffraction and hysteresis loop measurements as a function of the Zr/Ti ratio. Film thickness and annealing temperature dependencies are reported. (C) 2001 American Institute of Physics.
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页码:4204 / 4206
页数:3
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