Ga2O3 and GaN semiconductor hollow spheres

被引:518
作者
Sun, XM [1 ]
Li, YD [1 ]
机构
[1] Tsing Hua Univ, Minist Educ, Key Lab Atom & Mol Nanosci, Dept Chem, Beijing 100084, Peoples R China
关键词
gallium; microspheres; nanostructures; semiconductors; template synthesis;
D O I
10.1002/anie.200353212
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Carbon spheres are used as templates to prepare semiconductor hollow spheres of Ga2O3 (depicted) and GaN. The thickness and uniformity of the final products are predetermined by the thickness of the active layer of the carbon spheres. The diameter of the spheres can be adjusted in the range of 100 nm to 1.5 μm, which covers the band gaps in the spectral regime from UV to near infrared.
引用
收藏
页码:3827 / 3831
页数:5
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