Ultrafast carrier dynamics in undoped microcrystalline silicon

被引:10
作者
Kudrna, J
Maly, P
Trojánek, F
Stepánek, J
Lechner, T
Pelant, I
Meier, J
Kroll, U
机构
[1] Charles Univ, Fac Math & Phys, CR-12116 Prague 2, Czech Republic
[2] Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic
[3] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷
关键词
hydrogenated microcrystalline silicon; ultrafast laser spectroscopy; bimolecular recombination;
D O I
10.1016/S0921-5107(99)00302-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied ultrafast dynamics of photoexcited carriers in mu c-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in mu c-Si:H depend on the crystallinity of the material: in the samples with low crystalline fraction, the dynamics have a fast decay and resemble those in a-Si:H, while in the samples with high crystallinity the dynamics are slower and similar to those in c-Si. We have identified an intensity dependent bimolecular recombination in the samples with lower crystalline fraction (coefficient B = 2 x 10(-10) cm(3) s(-1) for deposition with silane dilution ratio approximate to 5% at a fixed power of 6 W), and no bimolecular recombination in the samples with high crystallinity. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:238 / 242
页数:5
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