Performance improvement of CdZnTe detectors using modified two-terminal electrode geometry

被引:22
作者
Parnham, K [1 ]
Szeles, C [1 ]
Lynn, KG [1 ]
Tjossem, R [1 ]
机构
[1] eV Prod, Saxonburg, PA 16056 USA
来源
HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS | 1999年 / 3768卷
关键词
D O I
10.1117/12.366620
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Recently, much has appeared in the literature concerning methods to improve the resolution and photopeak efficiency of CdZnTe radiation detectors operating at or around ambient temperature. These methods generally involve either the use of modified electrode structures (e.g. coplanar grids, three-terminal devices) or pulse processing techniques, both of which add complexity, and hence cost, to the production and operation of such devices. In this paper, we will report on results obtained with a simpler, modified two-terminal device. The detector structure combines a planar anode with an extended surface cathode, and relies on a standard, single channel preamplifier/shaping amplifier system. The results obtained demonstrate that the charge collection efficiency of the device, as shown by the Peak-to-Valley (PN) ratio, is significantly improved when compared to the standard planar geometry, especially at higher (>200 keV) photon energies.
引用
收藏
页码:49 / 54
页数:6
相关论文
共 8 条
[1]  
Apotovsky B., 1997, US patent 5,677,539, Patent No. 5677539
[2]   Gamma spectrometric characterization of various CdTe and CdZnTe detectors [J].
Arlt, R ;
Gryshchuk, V ;
Sumah, P .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 428 (01) :127-137
[3]  
James R.B., 1997, SEMICONDUCTORS SEMIM, V43, P335
[4]  
KHUSAINOV AK, 1997, P 19 ANN S SAF NUCL, P411
[5]   UNIPOLAR CHARGE SENSING WITH COPLANAR ELECTRODES - APPLICATION TO SEMICONDUCTOR-DETECTORS [J].
LUKE, PN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (04) :207-213
[6]   Single charge carrier type sensing with a parallel strip pseudo-Frisch-grid CdZnTe semiconductor radiation detector [J].
McGregor, DS ;
He, Z ;
Seifert, HA ;
Wehe, DK ;
Rojeski, RA .
APPLIED PHYSICS LETTERS, 1998, 72 (07) :792-794
[7]   Geometrically weighted semiconductor Frisch grid radiation spectrometers [J].
McGregor, DS ;
Rojeski, RA ;
He, Z ;
Wehe, DK ;
Driver, M ;
Blakely, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 422 (1-3) :164-168
[8]   Theoretical framework for mapping pulse shapes in semiconductor radiation detectors [J].
Prettyman, TH .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 428 (01) :72-80