Wetting effect on gap filling submicron damascene by an electrolyte free of levelers

被引:20
作者
Chang, SC
Shieh, JM [1 ]
Lin, KC
Dai, BT
Wang, TC
Chen, CF
Feng, MS
Li, YH
Lu, CP
机构
[1] Natl Nano Device Labs, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Inst Mat Sci & Engn, Hsinchu, Taiwan
[3] Merck Kanto Adv Chem Ltd, Taipei, Taiwan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期
关键词
D O I
10.1116/1.1486231
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By using an acid-copper electrolyte without levelers and brighteners, we achieved defect-free filling of 0.13 mum vias with aspect ratio 8:1. This novel electrolyte consisted of copper sulfate (CuSO4.5H(2)O), sulfuric acid (H2SO4), chloride ions (Cl-), and two different average molecular weights of polyethylene glycols (PEG). The smaller-molecular-weight PEG200, with higher diffusion ability, was identified to enhance cupric ions transporting into deep features and was treated as a bottom-up filling promoter. The larger-molecular-weight PEG2000, with higher polarization resistance, provided enough inhibition effect on cupric ion reduction to obtain denser and small-grained deposits in a lower-current-density region, which benefits the filling capability in submicron features. In addition, adding PEG2000 could reduce the interfacial energy between the electrolyte and the opening of trenches/vias to enhance the filling capability. (C) 2002 American Vacuum Society.
引用
收藏
页码:1311 / 1316
页数:6
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