Gallium arsenide p-i-n radial structures for photovoltaic applications

被引：239

作者：

Colombo, C. ^{[1
]}

Heiss, M. ^{[1
]}

Graetzel, M. ^{[2
]}

Fontcuberta i Morral, A. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Lab Photon & Interfaces, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 17期

基金：

瑞士国家科学基金会;

关键词：

electroluminescence; gallium arsenide; III-V semiconductors; molecular beam epitaxial growth; nanowires; photoconductivity; photovoltaic effects; semiconductor heterojunctions; semiconductor quantum wires; SOLAR-CELLS; GAAS NANOWIRES; SINGLE; HETEROSTRUCTURES;

D O I：

10.1063/1.3125435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. Spatially resolved and power dependent photocurrent measurements indicate that the p-i-n junction is homogeneous along the nanowire. Electroluminescence measurements show an emission peak at about 1.4 eV, further corroborating the good quality of the nanowire. These results constitute an important progress for the use of nanowires in photovoltaic applications.

引用

页数：3

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