Al nucleation on monohydride and bare Si(001) surfaces: Atomic scale patterning

被引：128

作者：

Shen, TC ^{[1
]}

Wang, C ^{[1
]}

Tucker, JR ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.78.1271

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Submonolayer coverages of Al were evaporated onto hydrogen-terminated Si(001)-(2 x 1) surfaces and studied by scanning tunneling microscopy (STM). Nanoscale patterns of bare Si were created by STM desorption of hydrogen, and the size and number density of Al islands on bare and monohydride areas of the surface were compared. Dramatic differences in island nucleation are observed which suggest that the diffusion length of Al adatoms on the monohydride region is much longer than on bare Si. With lowered deposition rates or faster diffusing species, the effects studied here may provide a basis for selective metal patterning at atomic dimensions.

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页码：1271 / 1274

页数：4

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