Single-step selective metallization of Mg/NH3 pretreated Teflon® by copper chemical vapor deposition

被引：4

作者：

Doppelt, P

Combellas, C

Kanoufi, F

Chen, TY

Richardson, S

Thiébault, A

机构：

[1] Ecole Super Phys & Chim Ind Ville Paris, Chim Inorgan Lab, CNRS, F-75231 Paris 05, France

[2] Ecole Super Phys & Chim Ind Ville Paris, CNRS, Lab Chim Analyt & Environm, F-75231 Paris 05, France

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 50卷 / 1-4期

关键词：

Teflon; low-k materials; metallization; copper CVD films;

D O I：

10.1016/S0167-9317(99)00306-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface of Teflon(R), which can be made hydrophilic by chemical treatment in a solution of solvated electrons in the presence of magnesium, can be restored by UV photochemical oxidation under oxygen. The Mg/NH3 treated Teflon surfaces are easily metallized in a single-step process by copper CVD when (MHY)Cu(hfac) is used as precursor (hfac, hexafluoroacetylacetonate; MHY, 2-methyl-1-hexene-3-yne). The growth rate of the copper film (thickness 200-500 nm) is in the range 30-50 nm/min. The Cu films, with a resistivity of 1.9+/-0.2 mu Ohm cm, are pure, as determined by X-ray photoelectron spectroscopy. Patterned UV irradiation of the treated Teflon resulted in an identical copper pattern after CVD and, hence, selective copper deposition could be achieved on Teflon. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：383 / 390

页数：8

共 10 条

[1]

BAUM TH, 1994, ELECTROCHEM SOC P, V9431, P320

[2] Surface modification of halogenated polymers 3.: Influence of additives such as alkali cations or nucleophiles on the magnesium reductive treatment of polytetrafluoroethylene [J].