Suppression of short-channel effects in organic thin-film transistors

被引：41

作者：

Wang, J. Z. ^{[1
]}

Zheng, Z. H. ^{[1
]}

Sirringhaus, H. ^{[1
]}

机构：

[1] Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2234724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To improve the speed of organic thin-film transistor (TFT) circuits device architectures with submicrometer channel length are of interest. However, in conventional, submicrometer TFT structures the performance is degraded as a result of short-channel effects. Here we present an architecture for short-channel organic TFTs which is based on incorporating an insulating mesa structure in between source and drain electrodes. For submicrometer organic TFTs the mesa structure results in a significant enhancement of the on-off ratio and saturation characteristics. Device modeling shows that the mesa improves the ability of the gate electrode to modulate the carrier concentration in a submicrometer channel. (c) 2006 American Institute of Physics.

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相关论文

共 11 条

[1] Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography [J].

Austin, MD ;

Chou, SY .

APPLIED PHYSICS LETTERS, 2002, 81 (23) :4431-4433

[2] Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors [J].

Calvet, LE ;

Luebben, H ;

Reed, MA ;

Wang, C ;

Snyder, JP ;

Tucker, JR .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :757-759

[3] Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films [J].

Collet, J ;

Tharaud, O ;

Chapoton, A ;

Vuillaume, D .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1941-1943

[4] Nano-field effect transistor with an organic self-assembled monolayer as gate insulator [J].

Collett, J ;

Vuillaume, D .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2681-2683

[5] Self-aligned, vertical-channel, polymer field-effect transistors [J].

Stutzmann, N ;

Friend, RH ;

Sirringhaus, H .

SCIENCE, 2003, 299 (5614) :1881-1884

[6] DEEP-SUBMICROMETER CHANNEL DESIGN IN SILICON-ON-INSULATOR (SOI) MOSFETS (VOL 15, PG 183, 1994) [J].

SU, LT ;

JACOBS, JB ;

CHUNG, JE ;

ANTONIADIS, DA .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) :366-369

[7] Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistors [J].

Wang, C ;

Snyder, JP ;

Tucker, JR .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1174-1176

[8] Dewetting of conducting polymer inkjet droplets on patterned surfaces [J].

Wang, JZ ;

Zheng, ZH ;

Li, HW ;

Huck, WTS ;

Sirringhaus, H .

NATURE MATERIALS, 2004, 3 (03) :171-176

[9]

YANG ES, 1988, MICROELECTRONIC DEVI, P277

[10] Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stamps [J].

Zaumseil, J ;

Someya, T ;

Bao, ZN ;

Loo, YL ;

Cirelli, R ;

Rogers, JA .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :793-795