Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI

被引：19

作者：

Leung, YK ^{[1
]}

Kuehne, SC ^{[1
]}

Huang, VSK ^{[1
]}

Nguyen, CT ^{[1
]}

Paul, AK ^{[1
]}

Plummer, JD ^{[1
]}

Wong, SS ^{[1
]}

机构：

[1] HONG KONG UNIV SCI & TECHNOL,DEPT ELECT & ELECT ENGN,CLEARWATER BAY,HONG KONG

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 01期

关键词：

D O I：

10.1109/55.553061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature profiles resulting from self-heating in SOI-LDMOS devices with uniformly doped and linearly graded drift regions were measured using a resistance thermometry technique. Two-dimensional electrothermal device simulations were performed and the results agreed with the experiments. Because of the different power dissipation profiles, RESURF devices with a uniformly doped drift region assume a fairly uniform temperature distribution while devices with a linearly graded drift region have a much higher temperature rise near the source than the drain, This local hot spot near the source raises reliability issues in device design.

引用

页码：13 / 15

页数：3

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